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Other articles related with "specific on-resistance"：
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78501 |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲) |
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A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance |
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Chin. Phys. B
2022 Vol.31 (7): 78501-078501
[Abstract]
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[PDF 1551 KB]
(134)
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67305 |
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67305-067305
[Abstract]
(507)
[HTML 0 KB]
[PDF 879 KB]
(106)
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58502 |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲) |
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Improved 4H-SiC UMOSFET with super-junction shield region |
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Chin. Phys. B
2021 Vol.30 (5): 58502-058502
[Abstract]
(544)
[HTML 1 KB]
[PDF 1030 KB]
(172)
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48503 |
Baoxing Duan(段宝兴), Xin Huang(黄鑫), Haitao Song (宋海涛), Yandong Wang(王彦东), and Yintang Yang(杨银堂) |
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Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer breaking silicon limit |
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Chin. Phys. B
2021 Vol.30 (4): 48503-
[Abstract]
(352)
[HTML 1 KB]
[PDF 753 KB]
(283)
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57701 |
Lijuan Wu(吴丽娟), Lin Zhu(朱琳), Xing Chen(陈星) |
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Variable-K double trenches SOI LDMOS with high-concentration P-pillar |
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Chin. Phys. B
2020 Vol.29 (5): 57701-057701
[Abstract]
(564)
[HTML 1 KB]
[PDF 484 KB]
(114)
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48502 |
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo |
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Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator |
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Chin. Phys. B
2018 Vol.27 (4): 48502-048502
[Abstract]
(725)
[HTML 1 KB]
[PDF 1087 KB]
(211)
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47305 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Peng-Hao Shi(石朋毫), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Low specific on-resistance GaN-based vertical heterostructure field effect transistors with nonuniform doping superjunctions |
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Chin. Phys. B
2018 Vol.27 (4): 47305-047305
[Abstract]
(654)
[HTML 1 KB]
[PDF 1596 KB]
(265)
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47306 |
Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃) |
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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions |
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Chin. Phys. B
2017 Vol.26 (4): 47306-047306
[Abstract]
(766)
[HTML 1 KB]
[PDF 9012 KB]
(379)
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27101 |
Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜) |
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Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET |
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Chin. Phys. B
2017 Vol.26 (2): 27101-027101
[Abstract]
(652)
[HTML 1 KB]
[PDF 651 KB]
(378)
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48502 |
Da Ma(马达), Xiao-Rong Luo(罗小蓉), Jie Wei(魏杰), Qiao Tan(谭桥), Kun Zhou(周坤), Jun-Feng Wu(吴俊峰) |
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Ultra-low specific on-resistance high-voltage vertical double diffusion metal-oxide-semiconductor field-effect transistor with continuous electron accumulation layer |
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Chin. Phys. B
2016 Vol.25 (4): 48502-048502
[Abstract]
(757)
[HTML 1 KB]
[PDF 788 KB]
(385)
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27306 |
Yan-Hui Zhang(张彦辉), Jie Wei(魏杰), Chao Yin(尹超), Qiao Tan(谭桥), Jian-Ping Liu(刘建平), Peng-Cheng Li(李鹏程), Xiao-Rong Luo(罗小蓉) |
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A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology |
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Chin. Phys. B
2016 Vol.25 (2): 27306-027306
[Abstract]
(796)
[HTML 1 KB]
[PDF 857 KB]
(919)
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47304 |
Li Peng-Cheng (李鹏程), Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Zhou Kun (周坤), Shi Xian-Long (石先龙), Zhang Yan-Hui (张彦辉), Lv Meng-Shan (吕孟山) |
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An ultra-low specific on-resistance trench LDMOS with a U-shaped gate and accumulation layer |
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Chin. Phys. B
2015 Vol.24 (4): 47304-047304
[Abstract]
(748)
[HTML 0 KB]
[PDF 618 KB]
(652)
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127303 |
Shi Xian-Long (石先龙), Luo Xiao-Rong (罗小蓉), Wei Jie (魏杰), Tan Qiao (谭桥), Liu Jian-Ping (刘建平), Xu Qing (徐青), Li Peng-Cheng (李鹏程), Tian Rui-Chao (田瑞超), Ma Da (马达) |
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A novel LDMOS with a junction field plate and a partial N-buried layer |
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Chin. Phys. B
2014 Vol.23 (12): 127303-127303
[Abstract]
(709)
[HTML 1 KB]
[PDF 620 KB]
(618)
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77306 |
Luo Yin-Chun (罗尹春), Luo Xiao-Rong (罗小蓉), Hu Gang-Yi (胡刚毅), Fan Yuan-Hang (范远航), Li Peng-Cheng (李鹏程), Wei Jie (魏杰), Tan Qiao (谭桥), Zhang Bo (张波) |
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A low specific on-resistance SOI LDMOS with a novel junction field plate |
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Chin. Phys. B
2014 Vol.23 (7): 77306-077306
[Abstract]
(847)
[HTML 1 KB]
[PDF 451 KB]
(548)
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118502 |
Fan Jie (范杰), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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High-voltage SOI lateral MOSFET with a dual vertical field plate |
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Chin. Phys. B
2013 Vol.22 (11): 118502-118502
[Abstract]
(695)
[HTML 1 KB]
[PDF 451 KB]
(736)
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77309 |
Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基) |
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A dual-gate and dielectric-inserted lateral trench insulated gate bipolar transistor on a silicon-on-insulator substrate |
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Chin. Phys. B
2013 Vol.22 (7): 77309-077309
[Abstract]
(587)
[HTML 1 KB]
[PDF 585 KB]
(623)
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48501 |
Fan Jie (范杰), Wang Zhi-Gang (汪志刚), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉) |
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Dual-gate lateral double-diffused metal–oxide semiconductor with ultra-low specific on-resistance |
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Chin. Phys. B
2013 Vol.22 (4): 48501-048501
[Abstract]
(795)
[HTML 1 KB]
[PDF 592 KB]
(1398)
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27302 |
Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Han Ji-Sheng (韩吉胜), Philip Tanner, Sima Dimitrijev, Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Guo Hui (郭辉) |
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The fabrication and characterization of 4H SiC power UMOSFETs |
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Chin. Phys. B
2013 Vol.22 (2): 27302-027302
[Abstract]
(1087)
[HTML 1 KB]
[PDF 441 KB]
(1558)
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27305 |
Wang Pei (王沛), Luo Xiao-Rong (罗小蓉), Jiang Yong-Heng (蒋永恒), Wang Qi (王琦), Zhou Kun (周坤), Wu Li-Juan (吴丽娟), Wang Xiao-Wei (王骁玮), Cai Jin-Yong (蔡金勇), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Xia-Rong (胡夏融), Fan Yuan-Hang (范远航), Wei Jie (魏杰), Zhang Bo (张波) |
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Ultra-low specific on-resistance vertical double-diffused metal-oxide semiconductor with a high-k dielectric-filled extended trench |
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Chin. Phys. B
2013 Vol.22 (2): 27305-027305
[Abstract]
(765)
[HTML 1 KB]
[PDF 535 KB]
(753)
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27304 |
Luo Xiao-Rong (罗小蓉), Luo Yin-Chun (罗尹春), Fan Ye (范叶), Hu Gang-Yi (胡刚毅), Wang Xiao-Wei (王骁玮), Zhang Zheng-Yuan (张正元), Fan Yuan-Hang (范远航), Cai Jin-Yong (蔡金勇), Wang Pei (王沛), Zhou Kun (周坤) |
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A low specific on-resistance SOI MOSFET with dual gates and recessed drain |
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Chin. Phys. B
2013 Vol.22 (2): 27304-027304
[Abstract]
(876)
[HTML 1 KB]
[PDF 684 KB]
(737)
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88502 |
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 ) |
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Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer |
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Chin. Phys. B
2012 Vol.21 (8): 88502-088502
[Abstract]
(1395)
[HTML 1 KB]
[PDF 907 KB]
(1218)
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68503 |
Wang Ying(王颖), Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷) |
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A novel power UMOSFET with a variable K dielectric layer |
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Chin. Phys. B
2012 Vol.21 (6): 68503-068503
[Abstract]
(1459)
[HTML 1 KB]
[PDF 552 KB]
(797)
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68501 |
Luo Xiao-Rong(罗小蓉), Yao Guo-Liang(姚国亮), Zhang Zheng-Yuan(张正元), Jiang Yong-Heng(蒋永恒), Zhou Kun(周坤), Wang Pei(王沛), Wang Yuan-Gang(王元刚), Lei Tian-Fei(雷天飞), Zhang Yun-Xuan(张云轩), and Wei Jie(魏杰) |
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A low on-resistance triple RESURF SOI LDMOS with planar and trench gate integration |
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Chin. Phys. B
2012 Vol.21 (6): 68501-068501
[Abstract]
(1689)
[HTML 1 KB]
[PDF 297 KB]
(1689)
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57301 |
Song Qing-Wen (宋庆文), Zhang Yu-Ming (张玉明), Zhang Yi-Men (张义门), Chen Feng-Ping (陈丰平), Tang Xiao-Yan (汤晓燕) |
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Investigation of current transport parameters of Ti/4H–SiC MPS diode with inhomogeneous barrier |
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Chin. Phys. B
2011 Vol.20 (5): 57301-057301
[Abstract]
(1338)
[HTML 0 KB]
[PDF 1152 KB]
(1890)
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87202 |
Song Qing-Wen(宋庆文), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Zhang Qian(张倩), and LÜ Hong-Liang(吕红亮) |
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Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region |
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Chin. Phys. B
2010 Vol.19 (8): 87202-087202
[Abstract]
(1831)
[HTML 0 KB]
[PDF 303 KB]
(886)
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